1
KCET 2018
MCQ (Single Correct Answer)
+1
-0
The DC common emitter current gain of an $n-p-n$ transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is, $V_{C E}=2 \mathrm{~V}$. If the collector resistance $R_C=4 \mathrm{k} \Omega$, the base current $\left(I_B\right)$ and the collector current $\left(I_C\right)$ are
A
$I_B=10 \mu \mathrm{~A}, I_C=0.5 \mathrm{~mA}$
B
$I_B=0.5 \mu \mathrm{~A}, I_C=10 \mathrm{~mA}$
C
$I_B=5 \mu \mathrm{~A}, I_C=1 \mathrm{~mA}$
D
$I_B=1 \mu \mathrm{~A}, I_C=0.5 \mathrm{~mA}$
2
KCET 2017
MCQ (Single Correct Answer)
+1
-0
In the three parts of a transistor, 'Emitter' is of
A
larger size and lightly doped
B
moderate size and heavily doped
C
thin size and heavily doped
D
large size and moderately doped
3
KCET 2017
MCQ (Single Correct Answer)
+1
-0
The energy gap in case of which of the following is less than 3 eV ?
A
Germanium
B
Iron
C
Copper
D
Aluminium
4
KCET 2017
MCQ (Single Correct Answer)
+1
-0

In the figure shown, if the diode forward voltage drop is 0.2 V , the voltage difference between $A$ and $B$ is

KCET 2017 Physics - Semiconductor Devices and Logic Gates Question 4 English
A
2.2 V
B
1.3 V
C
0
D
0.5 V
KCET Subjects
EXAM MAP