Semiconductor Devices and Logic Gates · Physics · KCET

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MCQ (Single Correct Answer)

1
A wafer of pure germanium crystal has two parts X and Y. The end X is obtained by doping with arsenic and Y with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?
KCET 2026 Physics - Semiconductor Devices and Logic Gates Question 3 English
KCET 2026
2
In which of the following figures, diode is reverse biased?
KCET 2026
3
An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with
KCET 2026
4
Which of the following statements is correct for an n-type semiconductor?
KCET 2025
5

The circuit shown in figure contains two ideal diodes $D_1$ and $D_2$. If a cell of emf $3 V$ and negligible internal resistance is connected as shown, then the current through $70 \Omega$ resistance, (in ampere) is

KCET 2025 Physics - Semiconductor Devices and Logic Gates Question 4 English
KCET 2025
6

Depletion region in an unbiased semiconductor diode is a region consisting of only free electrons only holes

KCET 2024
7

The upper level of valence band and lower level of conduction band overlap in the case of

KCET 2024
8

In the diagram shown, the Zener diode has a reverse breakdown voltage of $V_Z$. The current through the load resistance $R_L$ is $I_L$. The current through the Zener diode is

KCET 2024 Physics - Semiconductor Devices and Logic Gates Question 16 English

KCET 2024
9

A $p-n$ junction diode is connected to a battery of emf 5.7 V in series with a resistant $5 \mathrm{k} \Omega$ such that it is forward biased. If the barrier potential of the diode is 0.7 V , neglecting the diode resistance, the current in the circuit is

KCET 2024
10

When a $$p$$-$$n$$ junction diode is in forward bias, which type of charge carriers flows in the connecting wire?

KCET 2023
11

A full-wave rectifier with diodes $$D_1$$ and $$D_2$$ is used to rectify $$50 \mathrm{~Hz}$$ alternating voltage. The diode $$D_1$$ conducts ......... times in one second.

KCET 2023
12

A truth table for the given circuit is

KCET 2023 Physics - Semiconductor Devices and Logic Gates Question 31 English

KCET 2023
13

The resistivity of a semiconductor at room temperature is in between

KCET 2022
14

The forbidden energy gap for Ge crystal at 0K is

KCET 2022
15

Which logic gate is represented by the following combination of logic gates?

KCET 2022 Physics - Semiconductor Devices and Logic Gates Question 28 English

KCET 2022
16

The circuit given represents which of the logic operations?

KCET 2021 Physics - Semiconductor Devices and Logic Gates Question 24 English

KCET 2021
17

Identify the incorrect statement.

KCET 2021
18

Three photodiodes $$D_1, D_2$$ and $$D_3$$ are made of semiconductors having band gaps of $$2.5 \mathrm{~eV}, 2 \mathrm{~eV}$$ and $$3 \mathrm{~eV}$$, respectively. Which one will be able to detect light of wavelength $$600 \mathrm{~nm}$$ ?

KCET 2021
19

In the following circuit what are P and Q

KCET 2020 Physics - Semiconductor Devices and Logic Gates Question 22 English

KCET 2020
20

A positive hole in a semiconductor is

KCET 2020
21

The conductivity of semiconductor increases with increase in temperature because

KCET 2019
22

For a transistor amplifier, the voltage gain

KCET 2019
23

In the following circuit, what are P and Q?

KCET 2019 Physics - Semiconductor Devices and Logic Gates Question 19 English

KCET 2019
24
In a CE amplifier, the input AC signal to be amplified is applied across
KCET 2018
25
If $A=1$ and $B=0$, then in terms of Boolean algebra, $A+\bar{B}=$
KCET 2018
26
The density of electron-hole pair in a pure germanium is $3 \times 10^{16} \mathrm{~m}^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \mathrm{~m}^{-3}$. Now, the electron density (in $\mathrm{m}^{-3}$ ) in doped germanium will be
KCET 2018
27
The DC common emitter current gain of an $n-p-n$ transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is, $V_{C E}=2 \mathrm{~V}$. If the collector resistance $R_C=4 \mathrm{k} \Omega$, the base current $\left(I_B\right)$ and the collector current $\left(I_C\right)$ are
KCET 2018
28
In the three parts of a transistor, 'Emitter' is of
KCET 2017
29
The energy gap in case of which of the following is less than 3 eV ?
KCET 2017
30

In the figure shown, if the diode forward voltage drop is 0.2 V , the voltage difference between $A$ and $B$ is

KCET 2017 Physics - Semiconductor Devices and Logic Gates Question 7 English
KCET 2017
31
Which of the following semi-conducting device is used as voltage regulator?
KCET 2017
32
Which of the following logic gate is universal gate
KCET 2017