1
KCET 2026
MCQ (Single Correct Answer)
+1
-0
An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with
A
Arsenic and Phosphorous respectively
B
Indium and Aluminium respectively
C
Phosphorous and Indium respectively
D
Aluminium and Boron respectively
2
KCET 2025
MCQ (Single Correct Answer)
+1
-0
Which of the following statements is correct for an n-type semiconductor?
A
The donor energy level lies closely above the top of the valance band
B
The donor energy level lies at the half way mark of forbidden energy gap
C
The donor energy level does not exist
D
The donor energy level lies just the bottom of the conduction band
3
KCET 2025
MCQ (Single Correct Answer)
+1
-0

The circuit shown in figure contains two ideal diodes $D_1$ and $D_2$. If a cell of emf $3 V$ and negligible internal resistance is connected as shown, then the current through $70 \Omega$ resistance, (in ampere) is

KCET 2025 Physics - Semiconductor Devices and Logic Gates Question 4 English
A
0.01
B
0.02
C
0.03
D
0
4
KCET 2024
MCQ (Single Correct Answer)
+1
-0

Depletion region in an unbiased semiconductor diode is a region consisting of only free electrons only holes

A
both free electrons and holes
B
neither free electrons nor holes
C
only free electrons
D
only holes

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