1
MHT CET 2026 17th April Evening Shift
MCQ (Single Correct Answer)
+1
-0
In the following digital circuit, the output 'Y' will be '1' (one) for inputs 'A' and 'B' having values
A
$A = 0 , B = 0$
B
$A = 0 , B = 1$
C
$A = 1 , B = 0$
D
$A = 1 , B = 1$
2
MHT CET 2026 17th April Evening Shift
MCQ (Single Correct Answer)
+1
-0
In common emitter configuration of transistor amplifier, $r_i$, $R_L$ and $\beta$ represent the input resistance, load resistance and the a.c. current gain respectively. The voltage gain $A_V$ and power gain $A_P$ are represented in magnitude respectively by
A
$\beta\left(\dfrac{r_i}{R_L}\right) , \beta^2\left(\dfrac{r_i}{R_L}\right)$
B
$\beta\left(\dfrac{R_L}{r_i}\right) , \beta\left(\dfrac{R_L}{r_i}\right)^2$
C
$\beta\left(\dfrac{R_L}{r_i}\right) , \beta^2\left(\dfrac{R_L}{r_i}\right)$
D
$\beta\left(\dfrac{r_i}{R_L}\right) , \beta\left(\dfrac{r_i}{R_L}\right)^2$
3
MHT CET 2026 17th April Evening Shift
MCQ (Single Correct Answer)
+1
-0
A semiconductor X is made by doping a germanium crystal with indium $(Z = 49)$. A second semiconductor Y is made by doping germanium crystal with arsenic $(Z = 33)$. Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?
A
X is p-type, Y is n-type and the junction is forward biased.
B
X is p-type, Y is n-type and the junction is reverse biased.
C
X is n-type, Y is p-type and the junction is forward biased.
D
X is n-type, Y is p-type and the junction is reverse biased.

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