1
MHT CET 2023 10th May Evening Shift
MCQ (Single Correct Answer)
+1
-0

Assume that an electric field $$\mathrm{E}=30 \mathrm{x}^2 \hat{\mathrm{i}}$$ exists in space. If '$$\mathrm{V}_0$$' is the potential at the origin and '$$V_A$$' is the potential at $$x=2 \mathrm{~m}$$, then the potential difference $$\left(\mathrm{V}_{\mathrm{A}}-\mathrm{V}_0\right)$$ is

A
$$-80 \mathrm{~J}$$
B
$$-120 \mathrm{~J}$$
C
$$80 \mathrm{~J}$$
D
$$120 \mathrm{~J}$$
2
MHT CET 2023 10th May Evening Shift
MCQ (Single Correct Answer)
+1
-0

Two dielectric slabs having dielectric constant '$$\mathrm{K}_1$$' and '$$\mathrm{K}_2$$' of thickness $$\frac{\mathrm{d}}{4}$$ and $$\frac{3 \mathrm{~d}}{4}$$ are inserted between the plates as shown in figure. The net capacitance between $$A$$ and $$B$$ is $$\left[\varepsilon_0\right.$$ is permittivity of free space]

MHT CET 2023 10th May Evening Shift Physics - Capacitor Question 32 English

A
$$\frac{2 \mathrm{~A} \varepsilon_0}{\mathrm{~d}}\left[\frac{\mathrm{K}_1 \mathrm{~K}_2}{3 \mathrm{~K}_1+\mathrm{K}_2}\right]$$
B
$$\frac{3 \mathrm{~A} \varepsilon_0}{\mathrm{~d}}\left[\frac{\mathrm{K}_1+\mathrm{K}_2}{\mathrm{~K}_1 \mathrm{~K}_2}\right]$$
C
$$\frac{3 \mathrm{~A}_0}{2 \mathrm{~d}}\left[\frac{\mathrm{K}_1+\mathrm{K}_2}{\mathrm{~K}_1 \mathrm{~K}_2}\right]$$
D
$$\frac{4 A \varepsilon_0}{d}\left[\frac{K_1 K_2}{3 K_1+K_2}\right]$$
3
MHT CET 2023 10th May Evening Shift
MCQ (Single Correct Answer)
+1
-0

The output of an 'OR' gate is connected to both the inputs of a 'NAND' gate. The combination will serve as

A
OR gate
B
NOT gate
C
NOR gate
D
AND gate
4
MHT CET 2023 10th May Evening Shift
MCQ (Single Correct Answer)
+1
-0

Which one of the operations of $$\mathrm{n}-\mathrm{p}-\mathrm{n}$$ transistor differs from that of $$p-n-p$$ transistor?

A
The emitter-base junction is reversed biased in $$\mathrm{n}-\mathrm{p}-\mathrm{n}$$ transistor.
B
The emitter injects minority carriers into the base region of the $$\mathrm{p}-\mathrm{n}-\mathrm{p}$$ transistor.
C
The emitter injects holes into the base of the $$\mathrm{p}-\mathrm{n}-\mathrm{p}$$ transistor and electrons into the base region of $$n-p-n$$ transistor.
D
The emitter injects holes into the base of $$\mathrm{n}-\mathrm{p}-\mathrm{n}$$ transistor.
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