1
IAT (IISER) 2023
MCQ (Single Correct Answer)
+4
-1
The intrinsic electron and hole concentrations of a Si-based intrinsic semiconductor are $n_e^{(0)}$ and $n_h^{(0)}$, respectively. Upon doping with trivalent impurities the respective carrier concentrations become $n_e$ and $n_h$. Which of the following options is true?
A
$n_e=n_h$
B
$n_e>n_e^{(0)}$
C
$n_h>n_h^{(0)}$
D
$n_e^{(0)}$ and $n_h^{(0)}$ are independent of temperature
2
IAT (IISER) 2020
MCQ (Single Correct Answer)
+4
-1

Consider the circuit with a Zener diode whose breakdown voltage $V_z=4 \mathrm{~V}$. What is the voltage $V_0$ if $V_i=20 \mathrm{~V}$ ?

IAT (IISER) 2020 Physics - Semiconductor Devices and Logic Gates Question 2 English
A
8V
B
12V
C
10V
D
16V
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