The intrinsic electron and hole concentrations of a Si-based intrinsic semiconductor are $n_e^{(0)}$ and $n_h^{(0)}$, respectively. Upon doping with trivalent impurities the respective carrier concentrations become $n_e$ and $n_h$. Which of the following options is true?

The velocity $v(t)$ of a particle moving in one dimension is given by:

$$ v(t)= \begin{cases}\alpha t, & 0 \leq t \leq T / 3 \\ \alpha T / 3, & T / 3 \leq t \leq 2 T / 3 \\ \alpha(T-t), & 2 T / 3 \leq t \leq T\end{cases} $$

where $\alpha(\neq 0)$ is a constant. What is the displacement of the particle from time $t=0$ to $T$ ?

Two fixed point particles, each of charge $+q$, are separated by a distance $2 L$. Another point charge $+q$ of mass $m$ is oscillating about its equilibrium position as indicated in the figure below. The time period of oscillation is given by $T=$ $2 \pi^{3 / 2} \alpha \sqrt{m} / q$. Given that $\epsilon_0$ is the

permittivity of free space, which of the following options is the dimensionally correct expression for $\alpha$ in SI units?

$$ \text { What is the effective resistance between } A \text { and } B \text { in the circuit shown below? } $$