A germanium crystal is doped with arsenic atoms and indium atoms simultaneously. Number of arsenic atoms used $=5 \times 10^{22}$ per $\mathrm{m}^3$ and number of indium atoms used $=5 \times 10^{20}$ per $\mathrm{m}^3$, then resulting crystal is a/an

Assuming the diodes to be of silicon with forward resistance zero, the current $$i$$ in the following circuit is

In a $$n$$-$$p$$-$$n$$ transistor $$10^{10}$$ electrons enter the emitter in $$10^{-6}$$ s. $$6 \%$$ of the other electrons are lost in the base. The current transfer ratio will be.

When in $$p$$-$$n$$ junction diode, $$p$$ is connected to the positive terminal and $$n$$ is connected to the negative terminal, then it is