(a) Draw the circuit arrangement for studying V-I characteristics of a $$p$$-$$n$$ junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode. Describe briefly the following terms: (i) minority carrier injection in forward biasing and (ii) breakdown voltage in reverse biasing.

OR

(b) Name two important processes involved in the formation of a p-n junction diode. With the help of a circuit diagram, explain the working of junction diode as a full wave rectifier. Draw its input and output waveforms. State the characteristic property of a junction diode that makes it suitable for rectification.