Semiconductor Devices and Logic Gates · Physics · BITSAT

The equivalent resistance of the circuit across $A B$ is given by

The temperature $(T)$ dependence of resistivity ( $\rho$ ) of a semiconductor is represented by

A common emitter amplifier has a voltage gain of 50 an input impedance of 100 $$\Omega$$ and an output impedance of 400 $$\Omega$$. The power gain of the amplifier is

Truth table for system of four NAND gate and one NOT gate as shown in figure is.

For an insulator, the forbidden energy gap is

In the circuit shown assume the diode to be ideal. When V_i increases from $$-$$2V to 6V, the change in current is (in mA)

In the following circuit the equivalent resistance between X and Y is ......... $$\Omega$$

A transistor is connected in common-emitter (CE) configuration. The collector supply is 8V and the voltage drop across a resistor is 500 $$\Omega$$ in the collector circuit is 0.6 V. IF the current gain factor $$\alpha$$ is 0.96, find the base current

The phase difference between V_out and V_in of CE amplifier circuit is

The current in the circuit will be

The combination of the gates shown in following figure yields

The reading of the ammeter for a germanium diode in the given circuit is