Assertion (A): We cannot form a $p-n$ junction diode by taking a slab of a $p$-type semiconductor and physically joining it to another slab of a $n$-type semiconductor.

Reason (R): In a $p$-type semiconductor $\eta_e \gg \eta_h$ while in a $n$-type semiconductor $\eta_h \gg \eta_{e^*}$

A pure Si crystal having $5 \times 10^{28}$ atoms $\mathrm{m}^{-3}$ is dopped with 1 ppm concentration of antimony. If the concentration of holes in the doped crystal is found to be $4.5 \times 10^9 \mathrm{~m}^{-3}$, the concentration (in $\mathrm{m}^{-3}$ ) of intrinsic charge carriers in Si crystal is about

During the formation of a $$p$$-$$n$$ junction:

Assertion (A) : The resistance of an intrinsic semiconductor decreases with increase in its temperature.

Reason (R) : The number of conduction electrons as well as hole increase in an intrinsic semiconductor with rise in its temperature.