Assertion (A) : The resistance of an intrinsic semiconductor decreases with increase in its temperature.

Reason (R) : The number of conduction electrons as well as hole increase in an intrinsic semiconductor with rise in its temperature.

In an extrinsic semiconductor, the number density of holes is $$4 \times 10^{20} \mathrm{~m}^{-3}$$. If the number density of intrinsic carriers is $$1.2 \times 10^{15} \mathbf{m}^3$$, the number density of electrons in it is

Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of

The formation of depletion region in a $$p$$-$$n$$ junction diode is due to