1
GATE ECE 2017 Set 2
Numerical
+2
-0
In the circuit shown, transistors Q1 and Q2 are biased at a collector current of 2.6 mA. Assuming that transistor current gains are sufficiently large to assume collector current equal to emitter current and thermal voltage of 26m V, the magnitude of voltage gain Vo/Vs in the mid-band frequency range is _____________ (up to second decimal place). GATE ECE 2017 Set 2 Analog Circuits - Bipolar Junction Transistor Question 8 English
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2
GATE ECE 2015 Set 2
Numerical
+2
-0
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with β >> 1. The open circuit small signal voltage gain is approximately _______. GATE ECE 2015 Set 2 Analog Circuits - Bipolar Junction Transistor Question 11 English
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3
GATE ECE 2015 Set 1
Numerical
+2
-0
In the circuit shown, I1 = 80 mA and I2 b= 4mA. Transistors T1 and T2 are identical. Assume that the thermal voltage VT is 26 mV at 27oC. At 50oC, the value of the voltage V12 = V1 - V2 (in mV) is _______. GATE ECE 2015 Set 1 Analog Circuits - Bipolar Junction Transistor Question 12 English
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4
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let IC be the collector current, VBE be the base-emitter voltage and VT be the thermal voltage. Also, 𝑔m and 𝑟o are the small-signal transconductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of RE? GATE ECE 2014 Set 4 Analog Circuits - Bipolar Junction Transistor Question 15 English
A
$${g_m}{R_E} < < \,1$$
B
$${I_C}{R_E} > > \,{V_T}$$
C
$${g_m}{R_o} > > \,1$$
D
$${V_{BE}}\, > > {V_T}$$
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